TSD1N21A1G95LV0ENT

(旧型号 FI212P1955EN-T)

陶瓷RF元件

[陶瓷RF元件(双工器)for 5G]


外观

产品规格

供应体制 量产(推荐)
System LTE/5G
频率1定义 Low band
通带频率1 (f1) 617 to 2200 MHz
插入损耗1 (max)(in f1) 1.75 dB at 617 to 2200MHz ( ℃)
插入损耗2 (max)(in f1) 1.9 dB at 617 to 2200MHz (-40 to +85 ℃)
VSWR1 (max)(in f1) 2 at 617 to 2200MHz
衰减量1 (min)(f1) 16 dB at 2496 to 2690MHz
衰减量2 (min)(f1) 17 dB at 3300 to 5000MHz
频率2定义 High band
通带频率2 (f2) 2496 to 5000 MHz
插入损耗1 (max)(in f2) 1.55 dB at 2496 to 5000MHz ( ℃)
插入损耗2 (max)(in f2) 1.7 dB at 2496 to 5000MHz (-40 to +85 ℃)
VSWR1 (max)(in f2) 2 at 2496 to 5000
衰减量1 (min)(f2) 14 dB at 1427 to 1710MHz
衰减量2 (min)(f2) 17 dB at 1710 to 2200MHz
输入阻抗 / 输出阻抗 50 Ω / 50 Ω
尺寸 (L) 2.0 ±0.15 mm
尺寸 (W) 1.25 ±0.15 mm
尺寸 (T) Max 1.0 mm
使用温度范围 -40 to +85 ℃
RoHS Compliance (10 subst.) Yes
REACH Compliance (240 subst.) Yes
IEC62474 (Ver. D28.00) Compliance Yes
Halogen Free Yes
适用焊接 方法 Reflow
包装 Taping Embossed 3000pcs
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特征

for 5G NR

for EN-DC

Stable temperature characteristics

Please confirm the detailed information with sales person.

产品資料

链接

关于产品的环保证明书

特徵值圖

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